Invention Grant
- Patent Title: Multi-wafer reactor
- Patent Title (中): 多晶圆反应堆
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Application No.: US14060173Application Date: 2013-10-22
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Publication No.: US09087695B2Publication Date: 2015-07-21
- Inventor: Igor Agafonov , Jinwei Yang , Michael Shur , Remigijus Gaska
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; C23C16/455 ; C23C16/458 ; C23C16/52 ; H01L21/66
Abstract:
A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables.
Public/Granted literature
- US20140113389A1 Multi-Wafer Reactor Public/Granted day:2014-04-24
Information query
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