Invention Grant
- Patent Title: Methods of forming charge storage structures including etching diffused regions to form recesses
- Patent Title (中): 形成电荷存储结构的方法包括蚀刻扩散区以形成凹陷
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Application No.: US14456337Application Date: 2014-08-11
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Publication No.: US09087737B2Publication Date: 2015-07-21
- Inventor: Alex Schrinsky , Anish Khandekar , Pavan Aella , Niraj B. Rana
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/115 ; H01L21/3213 ; H01L29/66 ; H01L29/788 ; H01L29/792
Abstract:
Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.
Public/Granted literature
- US20140349454A1 METHODS OF FORMING CHARGE STORAGE STRUCTURES INCLUDING ETCHING DIFFUSED REGIONS TO FORM RECESSES Public/Granted day:2014-11-27
Information query
IPC分类:
