发明授权
- 专利标题： Nitride based heterojunction semiconductor device and manufacturing method thereof
- 专利标题（中）： 氮化物基异质结半导体器件及其制造方法
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申请号： US13759923申请日： 2013-02-05
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公开(公告)号： US09087768B2公开(公告)日： 2015-07-21
- 发明人: Jae Hoon Lee , Jae Hyun Jeong
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： McDermott Will & Emery LLP
- 优先权： KR10-2012-0011897 20120206
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/205 ; H01L29/872 ; H01L29/201 ; H01L29/20
摘要：
A nitride based heterojunction semiconductor device includes a gallium nitride (GaN) layer disposed on a substrate, an aluminum (Al)-doped GaN layer disposed on the GaN layer, a Schottky electrode disposed in a first area on the Al-doped GaN layer, an AlGaN layer disposed in a second area on the Al-doped GaN layer, and an ohmic electrode disposed on the AlGaN layer. The first area is different from the second area.
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