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1.发明授权Nitride based heterojunction semiconductor device and manufacturing method thereof 有权氮化物基异质结半导体器件及其制造方法公开(公告)号：US09087768B2
公开(公告)日：2015-07-21
申请号：US13759923
申请日：2013-02-05
发明人： Jae Hoon Lee , Jae Hyun Jeong
IPC分类号： H01L29/66 , H01L29/205 , H01L29/872 , H01L29/201 , H01L29/20
CPC分类号： H01L29/205 , H01L29/2003 , H01L29/201 , H01L29/872
摘要： A nitride based heterojunction semiconductor device includes a gallium nitride (GaN) layer disposed on a substrate, an aluminum (Al)-doped GaN layer disposed on the GaN layer, a Schottky electrode disposed in a first area on the Al-doped GaN layer, an AlGaN layer disposed in a second area on the Al-doped GaN layer, and an ohmic electrode disposed on the AlGaN layer. The first area is different from the second area.
摘要翻译： 氮化物基异质结半导体器件包括设置在衬底上的氮化镓（GaN）层，设置在GaN层上的铝（Al）掺杂的GaN层，设置在Al掺杂GaN层上的第一区域中的肖特基电极， 设置在Al掺杂GaN层上的第二区域中的AlGaN层和设置在AlGaN层上的欧姆电极。 第一个区域与第二个区域不同。
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2.发明申请NITRIDE BASED HETEROJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权基于氮化物的异质半导体器件及其制造方法公开(公告)号：US20130200388A1
公开(公告)日：2013-08-08
申请号：US13759923
申请日：2013-02-05
发明人： Jae Hoon Lee , Jae Hyun Jeong
IPC分类号： H01L29/205
CPC分类号： H01L29/205 , H01L29/2003 , H01L29/201 , H01L29/872
摘要： A nitride based heterojunction semiconductor device includes a gallium nitride (GaN) layer disposed on a substrate, an aluminum (Al)-doped GaN layer disposed on the GaN layer, a Schottky electrode disposed in a first area on the Al-doped GaN layer, an AlGaN layer disposed in a second area on the Al-doped GaN layer, and an ohmic electrode disposed on the AlGaN layer. The first area is different from the second area.
摘要翻译： 氮化物基异质结半导体器件包括设置在衬底上的氮化镓（GaN）层，设置在GaN层上的铝（Al）掺杂的GaN层，设置在Al掺杂GaN层上的第一区域中的肖特基电极， 设置在Al掺杂GaN层上的第二区域中的AlGaN层和设置在AlGaN层上的欧姆电极。 第一个区域与第二个区域不同。
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