发明授权
US09087838B2 Structure and method for a high-K transformer with capacitive coupling
有权
具有电容耦合的高K变压器的结构和方法
- 专利标题: Structure and method for a high-K transformer with capacitive coupling
- 专利标题(中): 具有电容耦合的高K变压器的结构和方法
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申请号: US13280786申请日: 2011-10-25
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公开(公告)号: US09087838B2公开(公告)日: 2015-07-21
- 发明人: Hsiao-Tsung Yen , Yu-Ling Lin , Chin-Wei Kuo , Ho-Hsiang Chen , Min-Chie Jeng
- 申请人: Hsiao-Tsung Yen , Yu-Ling Lin , Chin-Wei Kuo , Ho-Hsiang Chen , Min-Chie Jeng
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L21/02 ; H01L23/522 ; H01L23/64 ; H01L49/02
摘要:
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having an integrated circuit (IC) device; an interconnect structure disposed on the semiconductor substrate and coupled with the IC device; and a transformer disposed on the semiconductor substrate and integrated in the interconnect structure. The transformer includes a first conductive feature; a second conductive feature inductively coupled with the first conductive feature; a third conductive feature electrically connected to the first conductive feature; and a fourth conductive feature electrically connected to the second conductive feature. The third and fourth conductive features are designed and configured to be capacitively coupled to increase a coupling coefficient of the transformer.
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