发明授权
US09087838B2 Structure and method for a high-K transformer with capacitive coupling 有权
具有电容耦合的高K变压器的结构和方法

Structure and method for a high-K transformer with capacitive coupling
摘要:
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having an integrated circuit (IC) device; an interconnect structure disposed on the semiconductor substrate and coupled with the IC device; and a transformer disposed on the semiconductor substrate and integrated in the interconnect structure. The transformer includes a first conductive feature; a second conductive feature inductively coupled with the first conductive feature; a third conductive feature electrically connected to the first conductive feature; and a fourth conductive feature electrically connected to the second conductive feature. The third and fourth conductive features are designed and configured to be capacitively coupled to increase a coupling coefficient of the transformer.
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