Invention Grant
- Patent Title: Semiconductor device including fuse structure
- Patent Title (中): 半导体器件包括熔丝结构
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Application No.: US14304750Application Date: 2014-06-13
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Publication No.: US09087842B2Publication Date: 2015-07-21
- Inventor: Hyun-Min Choi , Shigenobu Maeda , Ji-Hoon Yoon , Sung-Man Lim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0126135 20131022
- Main IPC: H01L27/10
- IPC: H01L27/10 ; H01L29/00 ; H01L23/525 ; H01L23/522

Abstract:
A semiconductor device includes a substrate having a fuse area and a device area; a fuse structure in an insulating layer of the fuse area, and a wire structure in the insulating layer of the device area. The fuse structure includes a fuse via, a fuse line electrically connected to a top end of the fuse via pattern and extending in a direction. The wire structure includes a wire via, a wire line electrically connected to a top end of the wire via and extending in the first direction. A width in the first direction of the fuse via is smaller than a width in the first direction of the wire via.
Public/Granted literature
- US20150108602A1 SEMICONDUCTOR DEVICE INCLUDING FUSE STRUCTURE Public/Granted day:2015-04-23
Information query
IPC分类: