Invention Grant
- Patent Title: Transistor structures and methods of fabrication thereof
- Patent Title (中): 晶体管结构及其制造方法
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Application No.: US14027713Application Date: 2013-09-16
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Publication No.: US09088000B2Publication Date: 2015-07-21
- Inventor: Nir Tessler , Moti Margalit , Oded Globerman , Roy Shenhar
- Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
- Applicant Address: IL Haifa
- Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
- Current Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
- Current Assignee Address: IL Haifa
- Agency: Oliff PLC
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L51/05 ; H01L51/00 ; H01L51/50 ; B82Y10/00
Abstract:
An electronic device is presented, such as a thin film transistor. The device comprises a patterned electrically-conductive layer associated with an active element of the electronic device. The electrically-conductive layer has a pattern defining an array of spaced-apart electrically conductive regions. This technique allows for increasing an electric current through the device.
Public/Granted literature
- US20140061650A1 TRANSISTOR STRUCTURES AND METHODS OF FABRICATION THEREOF Public/Granted day:2014-03-06
Information query
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