发明授权
- 专利标题： Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof
- 专利标题（中）： 具有结晶区域的氧化物半导体的半导体装置及其制造方法
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申请号： US12938533申请日： 2010-11-03
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公开(公告)号： US09093328B2公开(公告)日： 2015-07-28
- 发明人: Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
- 申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2009-255535 20091106
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L27/12 ; H01L29/786 ; H01L21/02
摘要：
An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.
公开/授权文献
- US20110109351A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2011-05-12
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