发明授权
- 专利标题： Spacer-damage-free etching
- 专利标题（中）： 无间隔蚀刻蚀刻
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申请号： US14084744申请日： 2013-11-20
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公开(公告)号： US09093386B2公开(公告)日： 2015-07-28
- 发明人: Tsung-Min Huang , Chung-Ju Lee , Yung-Hsu Wu
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/308 ; H01L21/768
摘要：
A method of patterning a semiconductor device is disclosed. A tri-layer photoresist is formed over a plurality of patterned features. The tri-layer photoresist includes a bottom layer, a middle layer disposed over the bottom layer, and a top layer disposed over the middle layer, the top layer containing a photo-sensitive material. The top layer is patterned via a photolithography process, the patterned top layer including an opening. The opening is extended into the bottom layer by etching the bottom layer and continuously forming a protective layer on etched surfaces of the bottom layer and on exposed surfaces of the patterned features. The bottom layer is removed. At least some portions of the protective layer remain on the exposed surfaces of the patterned features after the bottom layer is removed.
公开/授权文献
- US20150140811A1 Spacer-Damage-Free Etching 公开/授权日：2015-05-21
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