Invention Grant
US09093640B2 Method for manufacturing and magnetic devices having double tunnel barriers
有权
具有双层隧道屏障的制造方法和磁性装置
- Patent Title: Method for manufacturing and magnetic devices having double tunnel barriers
- Patent Title (中): 具有双层隧道屏障的制造方法和磁性装置
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Application No.: US14219902Application Date: 2014-03-19
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Publication No.: US09093640B2Publication Date: 2015-07-28
- Inventor: Sanjeev Aggarwal , Kerry Nagel , Jason Janesky
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Main IPC: H01L43/12
- IPC: H01L43/12
Abstract:
A dual tunnel barrier magnetic element has a free magnetic layer positioned between first and second tunnel barriers and an electrode over the second tunnel barrier. A two step etch process allows for forming an encapsulation material on a side wall of the electrode and the second tunnel barrier subsequent to the first etch for preventing damage to the first tunnel barrier when performing the second etch to remove a portion of the free layer.
Public/Granted literature
- US20140220707A1 METHOD FOR MANUFACTURING AND MAGNETIC DEVICES HAVING DOUBLE TUNNEL BARRIERS Public/Granted day:2014-08-07
Information query
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