Invention Grant
US09096420B2 Methods and apparatus for MEMS devices with increased sensitivity
有权
具有灵敏度增加的MEMS器件的方法和装置
- Patent Title: Methods and apparatus for MEMS devices with increased sensitivity
- Patent Title (中): 具有灵敏度增加的MEMS器件的方法和装置
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Application No.: US13790617Application Date: 2013-03-08
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Publication No.: US09096420B2Publication Date: 2015-08-04
- Inventor: Chia-Hua Chu , Chun-Wen Cheng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/14
- IPC: H01L27/14 ; B81B3/00 ; B81C1/00

Abstract:
Methods and apparatus for forming MEMS devices. An apparatus includes at least a portion of a semiconductor substrate having a first thickness and patterned to form a moveable mass; a moving sense electrode forming the first plate of a first capacitance; at least one anchor patterned from the semiconductor substrate and having a portion that forms the second plate of the first capacitance and spaced by a first gap from the first plate; a layer of semiconductor material of a second thickness patterned to form a first electrode forming a first plate of a second capacitance and further patterned to form a second electrode overlying the at least one anchor and forming a second plate spaced by a second gap that is less than the first gap; wherein a total capacitance is formed that is the sum of the first capacitance and the second capacitance. Methods are disclosed.
Public/Granted literature
- US20140252358A1 Methods and Apparatus for MEMS Devices with Increased Sensitivity Public/Granted day:2014-09-11
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