发明授权
- 专利标题: Semiconductor chip and semiconductor device
- 专利标题(中): 半导体芯片和半导体器件
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申请号: US13735661申请日: 2013-01-07
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公开(公告)号: US09099330B2公开(公告)日: 2015-08-04
- 发明人: Tomoaki Isozaki
- 申请人: Renesas Electronics Corporation
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2005-336133 20051121
- 主分类号: H03K19/0175
- IPC分类号: H03K19/0175 ; H03K19/0185 ; H03K19/094 ; H01L25/07 ; H01L27/092 ; H01L29/78 ; H03K3/038
摘要:
A semiconductor device includes a first semiconductor chip operating at a first power supply voltage and a second semiconductor chip operating at a second power supply voltage lower than the first power supply voltage to supply the second power supply voltage to the first semiconductor chip. The first semiconductor chip includes an output circuit including a first transistor and a second transistor, interconnected in series and turned on or off complementarily. The output circuit outputs a signal to a first external output terminal. The first semiconductor chip also includes a third transistor connected in series with the first and second transistors and having a gate electrode connected to a second output terminal.
公开/授权文献
- US20130154706A1 SEMICONDUCTOR CHIP AND SEMICONDUCTOR DEVICE 公开/授权日:2013-06-20
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