发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13602038申请日： 2012-08-31
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公开(公告)号： US09099348B2公开(公告)日： 2015-08-04
- 发明人: Ki Hong Lee , Seung Ho Pyi , Hyun Soo Shon
- 申请人： Ki Hong Lee , Seung Ho Pyi , Hyun Soo Shon
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2012-0010431 20120201
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L27/115
摘要：
A semiconductor device includes: vertical channel layers; a pipe channel layer configured to connect lower ends of the vertical channel layers; and a pipe gate surrounding the pipe channel layer and including a first region, which is in contact with the pipe channel layer and includes a first-type impurity, and remaining second regions including a second-type impurity different from the first type impurity.