Invention Grant
- Patent Title: Memory disturbance recovery mechanism
- Patent Title (中): 记忆障碍恢复机制
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Application No.: US14098322Application Date: 2013-12-05
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Publication No.: US09104646B2Publication Date: 2015-08-11
- Inventor: Hongzhong Zheng , Brent Haukness , Mehmet Günhan Ertosun , Ian P. Shaeffer
- Applicant: Rambus Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Fenwick & West LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G06F11/20

Abstract:
Components of a memory system, such as a memory controller and memory device, which detect accumulated memory read disturbances and correct such disturbances before they reach a level that causes errors. The memory device includes a memory array and a disturbance control circuit. The memory array includes a plurality of memory rows. Each memory row is associated with a disturbance warning circuit having a state that corresponds to an accumulated disturbance in the memory row. The disturbance control circuit determines, responsive to an activation of a memory row of the plurality of memory rows specified by a row access command, whether the disturbance condition is present in the memory row based on the state of the disturbance warning circuit associated with the memory row. If a disturbance condition is present, the disturbance control circuit causes a recovery operation to be performed on the memory row to reduce the accumulated disturbances.
Public/Granted literature
- US20140164823A1 Memory Disturbance Recovery Mechanism Public/Granted day:2014-06-12
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