Invention Grant
US09105467B2 Dummy cell array for fin field-effect transistor device and semiconductor integrated circuit including the dummy cell array 有权
用于鳍场效应晶体管器件的虚拟单元阵列和包括虚拟单元阵列的半导体集成电路

Dummy cell array for fin field-effect transistor device and semiconductor integrated circuit including the dummy cell array
Abstract:
A semiconductor device includes a substrate; a device area of the substrate, the device area including a plurality of device unit cells; and a dummy cell array arranged around the device area. The dummy cell array includes a plurality of dummy unit cells repeatedly arranged in a first direction and a second direction perpendicular to the first direction, each of the dummy cell unit having a structure corresponding to a device unit cell. The device unit cell includes at least a first transistor in the device area. The structure of the dummy unit cell includes an active area and a gate line. For each dummy unit cell, the active area and the gate line extend beyond a cell boundary that defines the dummy unit cell.
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