Abstract:
A plasma processing device is provided. The plasma processing device includes a plate formed between a window covering a top portion of a chamber where plasma processing is performed and an antenna generating a magnetic field, and a fluid supply unit supplying a fluid for controlling temperatures of the window and the antenna, wherein the plate includes first and second regions supplied with the fluid, and the fluid supply unit independently controls the first and second regions.
Abstract:
A plasma processing device is provided. The plasma processing device includes a plate formed between a window covering a top portion of a chamber where plasma processing is performed and an antenna generating a magnetic field, and a fluid supply unit supplying a fluid for controlling temperatures of the window and the antenna, wherein the plate includes first and second regions supplied with the fluid, and the fluid supply unit independently controls the first and second regions.
Abstract:
A semiconductor device includes a substrate; a device area of the substrate, the device area including a plurality of device unit cells; and a dummy cell array arranged around the device area. The dummy cell array includes a plurality of dummy unit cells repeatedly arranged in a first direction and a second direction perpendicular to the first direction, each of the dummy cell unit having a structure corresponding to a device unit cell. The device unit cell includes at least a first transistor in the device area. The structure of the dummy unit cell includes an active area and a gate line. For each dummy unit cell, the active area and the gate line extend beyond a cell boundary that defines the dummy unit cell.