Invention Grant
- Patent Title: Complementary metal oxide semiconductor device, optical apparatus including the same, and method of manufacturing the same
- Patent Title (中): 互补金属氧化物半导体器件，包括其的光学器件及其制造方法
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Application No.: US13974233Application Date: 2013-08-23
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Publication No.: US09105496B2Publication Date: 2015-08-11
- Inventor: Sang-moon Lee , Young-jin Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0001789 20130107
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/267 ; H01L27/15 ; H01L21/8258 ; H01L27/06
Abstract:
A complementary metal oxide semiconductor (CMOS) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a Group III-V compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate.
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