Invention Grant
US09105617B2 Methods and structures for eliminating or reducing line end epi material growth on gate structures
有权
消除或减少栅极结构上的线端外延材料生长的方法和结构
- Patent Title: Methods and structures for eliminating or reducing line end epi material growth on gate structures
- Patent Title (中): 消除或减少栅极结构上的线端外延材料生长的方法和结构
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Application No.: US14079043Application Date: 2013-11-13
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Publication No.: US09105617B2Publication Date: 2015-08-11
- Inventor: Ruilong Xie , Shom Ponoth , Juntao Li
- Applicant: GLOBALFOUNDRIES Inc. , International Business Machine Corporation
- Applicant Address: KY Grand Cayman US NY Armonk
- Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation
- Current Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation
- Current Assignee Address: KY Grand Cayman US NY Armonk
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/49 ; H01L27/085
Abstract:
One method disclosed herein includes, among other things, forming a line-end protection layer in an opening on an entirety of each opposing, spaced-apart first and second end face surfaces of first and second spaced-apart gate electrode structures, respectively, and forming a sidewall spacer adjacent opposing sidewall surfaces of each of the gate electrode structures but not adjacent the opposing first and second end face surfaces having the line-end protection layer positioned thereon.
Public/Granted literature
- US20150129970A1 METHODS AND STRUCTURES FOR ELIMINATING OR REDUCING LINE END EPI MATERIAL GROWTH ON GATE STRUCTURES Public/Granted day:2015-05-14
Information query
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