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US09105695B2 Cobalt selectivity improvement in selective cobalt process sequence 有权
选择性钴工艺序列中钴选择性的提高

Cobalt selectivity improvement in selective cobalt process sequence
Abstract:
Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.
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