Invention Grant
US09105719B2 Multigate metal oxide semiconductor devices and fabrication methods
有权
多金属氧化物半导体器件及其制造方法
- Patent Title: Multigate metal oxide semiconductor devices and fabrication methods
- Patent Title (中): 多金属氧化物半导体器件及其制造方法
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Application No.: US13737682Application Date: 2013-01-09
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Publication No.: US09105719B2Publication Date: 2015-08-11
- Inventor: Akira Ito
- Applicant: Broadcom Corporation
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Brinks Gilson & Lione
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
A semiconductor device includes a first well and a second well implanted in a semiconductor substrate. The semiconductor device further includes a gate structure above the first and second wells between a raised source structure and a raised drain structure. The raised source structure above is in contact with the first well and connected with the gate structure through a first semiconductor fin structure. The raised drain structure above and in contact with the second well and connected with a second semiconductor fin structure. The second semiconductor fin structure includes at least a gap and a lightly doped portion.
Public/Granted literature
- US09059280B2 Multigate metal oxide semiconductor devices and fabrication methods Public/Granted day:2015-06-16
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