Invention Grant
US09105780B2 Method of fabricating graphene quantum dots and high quality graphene quantum dots using the method
有权
使用该方法制造石墨烯量子点和高质量石墨烯量子点的方法
- Patent Title: Method of fabricating graphene quantum dots and high quality graphene quantum dots using the method
- Patent Title (中): 使用该方法制造石墨烯量子点和高质量石墨烯量子点的方法
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Application No.: US14152357Application Date: 2014-01-10
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Publication No.: US09105780B2Publication Date: 2015-08-11
- Inventor: SeokWoo Jeon , SungHo Song , BoHyun Kim
- Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Daejeon
- Assignee: Korea Advanced Institute of Science and Technology
- Current Assignee: Korea Advanced Institute of Science and Technology
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo P.C.
- Priority: KR10-2013-0127275 20131024
- Main IPC: C01B31/04
- IPC: C01B31/04 ; H01L33/04 ; H01L33/00 ; H01L33/34 ; B82Y40/00 ; B82Y20/00

Abstract:
A simple and easy method for fabricating graphene quantum dots with uniformed size and high quality of emission property comprises steps of, mixing graphite powders with metallic hydrate salts, forming an intercalation compound of graphite wherein metal ions are inserted by heating the mixed solution, and removing the metal ions from the intercalation compound of graphite. The graphene quantum dots is applicable to the development of electronic products in next generation such as display devices, recording devices, various sensors and nanocomputers and is applicable to biological and medicinal field as well.
Public/Granted literature
- US20150118143A1 METHOD OF FABRICATING GRAPHENE QUANTUM DOTS AND HIGH QUALITY GRAPHENE QUANTUM DOTS USING THE METHOD Public/Granted day:2015-04-30
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