发明授权
- 专利标题： Attenuator
- 专利标题（中）： 衰减器
-
申请号： US13435594申请日： 2012-03-30
-
公开(公告)号： US09105957B2公开(公告)日： 2015-08-11
- 发明人: Naoto Matono , Tsz Chun Ng , Hui Wang
- 申请人： Naoto Matono , Tsz Chun Ng , Hui Wang
- 申请人地址： CN Hong Kong
- 专利权人： SAE Magnetics (H.K.) Ltd.
- 当前专利权人： SAE Magnetics (H.K.) Ltd.
- 当前专利权人地址： CN Hong Kong
- 代理机构： Nixon & Vanderhye PC
- 优先权： CN201110446010 20111228
- 主分类号： H01P1/22
- IPC分类号： H01P1/22 ; H03H7/24 ; H01L27/08
摘要：
An attenuator includes: a first portion including a first insulating substrate and a resistor section formed on the first insulating substrate; and a second portion including a second insulating substrate and a terminal section, the second insulating substrate being separated from the first insulating substrate, and the terminal section being formed on the second insulating substrate to be connected to the resistor section.
公开/授权文献
- US20130169386A1 ATTENUATOR 公开/授权日：2013-07-04
信息查询
