Invention Grant
- Patent Title: Electrostatic discharge protection of amplifier cascode devices
- Patent Title (中): 放大器共源共栅器件的静电放电保护
-
Application No.: US13720836Application Date: 2012-12-19
-
Publication No.: US09106072B2Publication Date: 2015-08-11
- Inventor: Himanshu Khatri , Ojas M Choksi , Wei Zhuo
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Ramin Mobarhan
- Main IPC: H03F1/52
- IPC: H03F1/52 ; H02H9/04 ; H03F1/22

Abstract:
Exemplary embodiments are directed to providing electrostatic discharge (ESD) protection of a cascode device of an amplifier. In an exemplary embodiment, a transistor is configured to receive a bias voltage and at least one circuit element coupled to the transistor and configured to receive an input voltage via an input pad. Additionally at least one diode can be coupled to a drain of the first transistor and configured to limit a voltage potential at an internal node of the amplifier caused by the input pad.
Public/Granted literature
- US20140167862A1 ELECTROSTATIC DISCHARGE PROTECTION OF AMPLIFIER CASCODE DEVICES Public/Granted day:2014-06-19
Information query