Invention Grant
- Patent Title: Low-inductance power semiconductor assembly
- Patent Title (中): 低电感功率半导体组件
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Application No.: US13040348Application Date: 2011-03-04
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Publication No.: US09106124B2Publication Date: 2015-08-11
- Inventor: Reinhold Bayerer , Daniel Domes
- Applicant: Reinhold Bayerer , Daniel Domes
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102010002627 20100305
- Main IPC: H05K7/02
- IPC: H05K7/02 ; H02M7/00 ; H01L25/16
Abstract:
A low-inductive power semiconductor assembly is provided in which semiconductor switches are arranged behind one another in a main current path.
Public/Granted literature
- US20110216561A1 Low-Inductance Power Semiconductor Assembly Public/Granted day:2011-09-08
Information query
