- 专利标题: Target for laser produced plasma extreme ultraviolet light source
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申请号: US14563186申请日: 2014-12-08
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公开(公告)号: US09107279B2公开(公告)日: 2015-08-11
- 发明人: Robert J. Rafac , Yezheng Tao
- 申请人: ASML NETHERLANDS B.V.
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: DiBerardino McGovern IP Group LLC
- 主分类号: H05G2/00
- IPC分类号: H05G2/00 ; G21K5/00 ; G03F7/20
摘要:
Techniques for generating EUV light include directing a first pulse of radiation toward a target material droplet to form a modified droplet, the first pulse of radiation having an energy sufficient to alter a shape of the target material droplet; directing a second pulse of radiation toward the modified droplet to form an absorption material, the second pulse of radiation having an energy sufficient to change a property of the modified droplet, the property being related to absorption of radiation; and directing an amplified light beam toward the absorption material, the amplified light beam having an energy sufficient to convert at least a portion of the absorption material into extreme ultraviolet (EUV) light.
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