Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14053098Application Date: 2013-10-14
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Publication No.: US09111840B2Publication Date: 2015-08-18
- Inventor: Jeong Hun Heo , Yeo Jin Yoon , Joo Won Choi , Joon Hee Lee , Chang Yeon Kim , Su Young Lee
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2012-0114130 20121015; KR10-2012-0114133 20121015
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/62
Abstract:
Exemplary embodiments of the present invention disclose a semiconductor device and a method of fabricating the same. The semiconductor device includes a gallium nitride substrate, a plurality of semiconductor stacks disposed on the gallium nitride substrate, and an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation pattern insulating the semiconductor stacks from the gallium nitride substrate.
Public/Granted literature
- US20140131729A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-05-15
Information query
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