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    Light emitting diode with high luminous efficiency
    1.
    发明授权
    Light emitting diode with high luminous efficiency 有权

    公开(公告)号：US11264540B2

    公开(公告)日：2022-03-01

    申请号：US15145528

    申请日：2016-05-03

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Joon Hee Lee ,  Mi Hee Lee

    IPC: H01L33/38 ,  H01L33/40

    Abstract: A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers and an active layer disposed therebetween, a second hole formed through the active layer and the second conductive type semiconductor layer, and exposing the first conductive type semiconductor layer, a reflective metal layer contacting a portion of the light emitting structure, a cover metal layer contacting at least a portion of the reflective metal layer, a first insulation layer covering the reflective metal layer and the cover metal layer, an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the second hole, an electrode pad disposed on the light emitting structure, and a first hole formed through the first conductive type semiconductor layer and corresponding to the cover metal layer, in which the electrode pad overlaps the cover metal layer.

    LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME
    2.
    发明申请
    LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME 审中-公开
    发光二极管及其制造方法

    公开(公告)号：US20170069799A1

    公开(公告)日：2017-03-09

    申请号：US15355219

    申请日：2016-11-18

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Tae Hyuk IM ,  Chang Yeon Kim ,  Yeo Jin Yoon ,  Joon Hee Lee ,  Ki Bum Nam ,  Da Hye Kim ,  Chang Ik Im ,  Young Wug Kim

    IPC: H01L33/44 ,  H01L33/38 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01L33/22

    CPC classification number: H01L33/44 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/60 ,  H01L2933/0083 ,  H01L2933/0091

    Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.

    Abstract translation: 一种发光二极管，包括支撑衬底，设置在支撑衬底上并包括p型化合物半导体层的半导体堆叠，有源层和n型化合物半导体层，设置在支撑衬底之间的反射金属层 所述反射金属层与所述半导体叠层的p型化合物半导体层欧姆接触，并且包括暴露所述半导体叠层的一部分的凹槽，设置在所述支撑基板和所述半导体叠层之间的绝缘层，以及 设置在所述槽中，以及第一电极，所述第一电极包括第一电极焊盘和第一电极延伸部，并且与所述第一电极延伸部连接到所述第一电极焊盘的所述半导体堆叠的所述n型化合物半导体层接触， 电极延伸沿着发光二极管的外边界形成。

    Vertical light-emitting diode
    6.
    发明授权
    Vertical light-emitting diode 有权

    公开(公告)号：US12080828B2

    公开(公告)日：2024-09-03

    申请号：US17538021

    申请日：2021-11-30

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Joon Hee Lee

    IPC: H01L33/38 ,  H01L27/15 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62

    CPC classification number: H01L33/382 ,  H01L27/156 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32 ,  H01L33/405 ,  H01L33/62

    Abstract: A light-emitting diode includes a first conductive semiconductor layer, an upper insulating layer positioned on the first conductive semiconductor layer, a mesa including an active layer and a second conductive semiconductor layer and positioned under a certain region of the first conductive semiconductor layer, and first and second through-holes through which the first conductive semiconductor layer is exposed. The first through-holes are arranged in a region encompassed by the edge of the mesa. The second through-holes are arranged along the edge of the mesa so that some of the second through-holes are encompassed by the active layer and the second conductive semiconductor layer, respectively.

    Ultraviolet light emitting diode
    7.
    发明授权
    Ultraviolet light emitting diode 有权

    公开(公告)号：US11749780B2

    公开(公告)日：2023-09-05

    申请号：US17099499

    申请日：2020-11-16

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Ju Yong Park ,  Seong Gyu Jang ,  Kyu Ho Lee ,  Joon Hee Lee

    IPC: H01L33/38 ,  H01L33/62 ,  H01L33/00 ,  H01L33/24

    CPC classification number: H01L33/38 ,  H01L33/00 ,  H01L33/24 ,  H01L33/62

    Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

    Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer
    8.
    发明授权
    Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer 有权

    公开(公告)号：US10749074B2

    公开(公告)日：2020-08-18

    申请号：US16409603

    申请日：2019-05-10

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Mi Hee Lee ,  Chang Yeon Kim ,  Ju Yong Park ,  Jong Kyun You ,  Joon Hee Lee

    IPC: H01L27/32 ,  H01L33/20 ,  H01L33/32 ,  H01L33/10 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46

    Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

    UV light emitting diode
    9.
    发明授权
    UV light emitting diode 有权

    公开(公告)号：US10388832B2

    公开(公告)日：2019-08-20

    申请号：US15969723

    申请日：2018-05-02

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Seong Kyu Jang ,  Ji Hyeon Jeong ,  Kyu Ho Lee ,  Joon Hee Lee

    IPC: H01L27/00 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62 ,  H01L27/15 ,  H01L33/44 ,  H01L33/32 ,  H01L33/20 ,  H01L33/14 ,  H01L33/06

    Abstract: An ultraviolet light emitting diode is provided to comprise an n-type semiconductor layer disposed on a substrate; light emitting elements disposed on the n-type semiconductor layer, each comprising an active layer and a p-type semiconductor layer; an n-type ohmic contact layer contacting the n-type semiconductor layer around the micro light emitting elements; p-type ohmic contact layers contacting the p-type semiconductor layers, respectively; an n-bump electrically connecting to the n-type ohmic contact layer; and a p-bump electrically connected to the p-type ohmic contact layers, wherein each of the n-bump and the p-bump is disposed across over a plurality of micro light emitting elements. The micro light emitting elements may be arranged over a wide area of the substrate, and thus light output can be improved and a forward voltage may be lowered, in addition, the n-bump and the p-bump may be formed relatively widely.

    LIGHT EMITTING DIODE WITH HIGH EFFICIENCY
    10.
    发明申请
    LIGHT EMITTING DIODE WITH HIGH EFFICIENCY 有权
    发光二极管效率高

    公开(公告)号：US20170025571A1

    公开(公告)日：2017-01-26

    申请号：US15288043

    申请日：2016-10-07

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Tae Gyun KIM ,  Joon Hee Lee ,  Ki Hyun Kim ,  Sung Su Son

    IPC: H01L33/14 ,  H01L33/10 ,  H01L33/38

    CPC classification number: H01L33/145 ,  H01L33/10 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L2933/0016

    Abstract: A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers, an active layer, a first electrode electrically connected to the first conductive type semiconductor layer, a current blocking layer disposed on a lower surface of the light emitting structure, and a second electrode electrically connected to the second conductive type semiconductor layer. The second electrode includes a first reflective metal layer adjoining the second conductive type semiconductor layer, and a second reflective metal layer covering a lower surface of the current blocking layer and a lower surface of the first reflective metal layer, and adjoining the second conductive type semiconductor layer. A contact resistance between the second reflective metal layer and the second conductive type semiconductor layer is higher than a contact resistance between the first reflective metal layer and the second conductive type semiconductor layer.

    Abstract translation: 发光二极管包括：发光结构，包括第一和第二导电类型半导体层，有源层，与第一导电类型半导体层电连接的第一电极，设置在发光结构的下表面上的电流阻挡层， 和与第二导电型半导体层电连接的第二电极。 第二电极包括邻接第二导电型半导体层的第一反射金属层和覆盖电流阻挡层的下表面的第二反射金属层和第一反射金属层的下表面，并且邻接第二导电类型半导体 层。 第二反射金属层与第二导电型半导体层之间的接触电阻高于第一反射金属层与第二导电型半导体层之间的接触电阻。

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