The embodiments herein describe a dynamic metal-oxide-semiconductor field-effect transistor (MOSFET) gate driver system architecture and control scheme. The MOSFET gate driver system dynamically adjusts both the gate driver turn-on-resistance and the gate driver turn-off resistance within a single (i.e., one) switching cycle to reduce electromagnetic interference (EMI) in the system and to minimize the conduction loss of a power MOSFET during operation.