发明授权
- 专利标题: Thin film depositing apparatus
- 专利标题(中): 薄膜沉积设备
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申请号: US13182590申请日: 2011-07-14
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公开(公告)号: US09115425B2公开(公告)日: 2015-08-25
- 发明人: Woo-Seok Cheong
- 申请人: Woo-Seok Cheong
- 申请人地址: KR Daejeon
- 专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址: KR Daejeon
- 代理机构: Rabin & Berdo, P.C.
- 优先权: KR10-2010-0101510 20101018; KR10-2010-0131427 20101221
- 主分类号: C23C16/44
- IPC分类号: C23C16/44 ; B25J18/00 ; B25J15/06 ; C23C16/458 ; H01L21/677 ; C23C14/34 ; C23C14/56 ; H01L21/67
摘要:
Provided is a thin film depositing apparatus. The thin film depositing apparatus includes: a loading chamber loading a plurality of substrates; a first process chamber connected to the loading chamber and including a plurality of sputter guns inducing a first plasma on the plurality of substrates; a buffer chamber connected to the other side of the first process chamber facing the loading chamber; and a substrate transfer module simultaneously passing the plurality of substrates between the plurality of sputter guns during a process using the first plasma and transferring the plurality of substrates from the first process chamber to the buffer chamber.
公开/授权文献
- US20120090543A1 THIN FILM DEPOSITING APPARATUS 公开/授权日:2012-04-19
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