Invention Grant
US09117838B2 Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device
有权
不对称凹陷的大功率和高增益超短栅HEMT器件
- Patent Title: Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device
- Patent Title (中): 不对称凹陷的大功率和高增益超短栅HEMT器件
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Application No.: US13860190Application Date: 2013-04-10
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Publication No.: US09117838B2Publication Date: 2015-08-25
- Inventor: Dong Xu , Xiaoping S. Yang , Wendell Kong , Lee M. Mohnkern , Phillip M. Smith , Pane-chane Chao
- Applicant: BAE Systems Information and Electronic Systems Integration Inc.
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agent Daniel J. Long
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778
Abstract:
A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.
Public/Granted literature
- US20130230951A1 ASYMMETRICALLY RECESSED HIGH-POWER AND HIGH-GAIN ULTRA-SHORT GATE HEMT DEVICE Public/Granted day:2013-09-05
Information query
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