Invention Grant
US09117842B2 Methods of forming contacts to source/drain regions of FinFET devices
有权
形成与FinFET器件的源极/漏极区的接触的方法
- Patent Title: Methods of forming contacts to source/drain regions of FinFET devices
- Patent Title (中): 形成与FinFET器件的源极/漏极区的接触的方法
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Application No.: US13798429Application Date: 2013-03-13
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Publication No.: US09117842B2Publication Date: 2015-08-25
- Inventor: Andy C. Wei , Shao Ming Koh
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/66 ; H01L21/8234 ; H01L21/8238 ; H01L21/84
Abstract:
In one example, the method disclosed herein includes forming at least one fin for a FinFET device in a semiconducting substrate, performing at least one process operation to form a region in the at least one fin that contains a metal diffusion inhibiting material, depositing a layer of metal on the region in the at least one fin and forming a metal silicide region on the at least one fin.
Public/Granted literature
- US20140273369A1 METHODS OF FORMING CONTACTS TO SOURCE/DRAIN REGIONS OF FINFET DEVICES Public/Granted day:2014-09-18
Information query
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