发明授权
US09117931B2 Semiconductor device with a resonator using acoustic standing wave excited in semiconductor crystal
有权
具有在半导体晶体中激发的声驻波的谐振器的半导体器件
- 专利标题： Semiconductor device with a resonator using acoustic standing wave excited in semiconductor crystal
- 专利标题（中）： 具有在半导体晶体中激发的声驻波的谐振器的半导体器件
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申请号： US13685859申请日： 2012-11-27
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公开(公告)号： US09117931B2公开(公告)日： 2015-08-25
- 发明人: Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya , Junji Wadatsumi , Shouhei Kousai
- 申请人： Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya , Junji Wadatsumi , Shouhei Kousai
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2012-078261 20120329
- 主分类号： H01L29/84
- IPC分类号： H01L29/84 ; H03H9/24 ; H03H9/02
摘要：
A semiconductor device according to an embodiment has: a semiconductor substrate; an acoustic resonator formed on the semiconductor substrate, having a semiconductor layer including impurity electrically isolated from the substrate by depletion layer and configured to resonate at a predetermined resonance frequency based on acoustic standing wave excited in the semiconductor layer; a temperature detector formed on the semiconductor substrate and configured to detect temperature of the semiconductor substrate; a calculating unit formed on the semiconductor substrate and configured to perform calculation of temperature compensation based on the temperature detected by the temperature detector, kind of the impurity and concentration of the impurity; and a controller formed on the semiconductor substrate and configured to control the resonance frequency based on a result of the calculation by the calculating unit.
公开/授权文献
- US20130256660A1 SEMICONDUCTOR DEVICE 公开/授权日：2013-10-03