Invention Grant
- Patent Title: Method of manufacture of chalcogenide-based photovoltaic cells
- Patent Title (中): 基于硫族化物的光伏电池的制造方法
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Application No.: US14353918Application Date: 2012-10-22
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Publication No.: US09117965B2Publication Date: 2015-08-25
- Inventor: Melissa A. Mushrush , Todd R. Bryden , Kevin P. Capaldo , Scott A. Sprague
- Applicant: Dow Global Technologies LLC
- Assignee: Dow Global Technologies LLC
- Current Assignee: Dow Global Technologies LLC
- International Application: PCT/US2012/061273 WO 20121022
- International Announcement: WO2013/062891 WO 20130502
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0749 ; H01L31/032 ; H01L31/0224

Abstract:
The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered in two steps the first being at low rates or relatively high pressures and the second at high rates or relatively low pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.
Public/Granted literature
- US20140283907A1 METHOD OF MANUFACTURE OF CHALCOGENIDE-BASED PHOTOVOLTAIC CELLS Public/Granted day:2014-09-25
Information query
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