公开(公告)号：US20160155886A1

公开(公告)日：2016-06-02

申请号：US15015211

申请日：2016-02-04

Applicant: Dow Global Technologies LLC

Inventor： Todd R. Bryden ,  Jeffrey L. Fenton, JR. ,  Gary E. Mitchell ,  Kirk R. Thompson ,  Michael E. Mills ,  David J. Parrillo

IPC: H01L31/18 ,  H01L31/0749

CPC classification number: H01L31/18 ,  C23C14/0629 ,  C23C14/3414 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/02557 ,  H01L21/02631 ,  H01L31/022466 ,  H01L31/0322 ,  H01L31/03928 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

Abstract: The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.

公开(公告)号：US20140290738A1

公开(公告)日：2014-10-02

申请号：US14359936

申请日：2012-12-07

Applicant: DOW GLOBAL TECHNOLOGIES LLC

Inventor： Andrzej M. Malek ,  Todd R. Bryden ,  Peter C Lebaron

IPC: H01L31/0216

CPC classification number: H01L31/02167 ,  C03C17/245 ,  C03C17/2453 ,  C03C17/3417 ,  C03C2217/216 ,  C03C2217/231 ,  C03C2217/243 ,  C03C2217/76 ,  C03C2217/944 ,  C03C2217/948 ,  C03C2218/156 ,  C03C2218/32 ,  Y02E10/50

Abstract: The present invention is a method comprising depositing a metal oxide layer as part of the production of an optoelectrically active device and exposing the metal oxide layer to a reactive agent to form a relatively hydrophobic surface. The invention also includes device so made, preferably a photovoltaic device, which shows improved stability as compared to devices not subject to the treatment.

Abstract translation: 本发明是一种方法，包括沉积金属氧化物层作为制备光电活性器件的一部分，并将金属氧化物层暴露于反应剂以形成相对疏水的表面。 本发明还包括如此制造的装置，优选光伏器件，其与不经受处理的器件相比显示出改进的稳定性。

公开(公告)号：US20160149069A1

公开(公告)日：2016-05-26

申请号：US14948813

申请日：2015-11-23

Applicant: Dow Global Technologies LLC

Inventor： Todd R. Bryden ,  Jeffrey L. Fenton, JR. ,  Gary E. Mitchell ,  Kirk R. Thompson ,  Michael E. Mills ,  David J. Parrillo

IPC: H01L31/0749 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0392

CPC classification number: H01L31/18 ,  C23C14/0629 ,  C23C14/3414 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/02557 ,  H01L21/02631 ,  H01L31/022466 ,  H01L31/0322 ,  H01L31/03928 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

Abstract: The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.

Abstract translation: 本发明是一种在制造光伏电池的同时在铜硫属元素化物系吸收体上形成硫化镉基缓冲剂的方法。 缓冲液在相对高的压力下溅射。 所得到的电池具有良好的效率，并且根据一个实施例的特征在于吸收体和缓冲层之间的窄界面。 根据第二实施方案，缓冲剂通过相对高的氧含量被进一步表征。

公开(公告)号：US09117965B2

公开(公告)日：2015-08-25

申请号：US14353918

申请日：2012-10-22

Applicant: Dow Global Technologies LLC

Inventor： Melissa A. Mushrush ,  Todd R. Bryden ,  Kevin P. Capaldo ,  Scott A. Sprague

IPC: H01L31/18 ,  H01L31/0749 ,  H01L31/032 ,  H01L31/0224

CPC classification number: H01L31/1828 ,  H01L31/022441 ,  H01L31/022475 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541

Abstract: The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered in two steps the first being at low rates or relatively high pressures and the second at high rates or relatively low pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.

Abstract translation: 本发明是一种在制造光伏电池的同时在铜硫属元素化物系吸收体上形成硫化镉基缓冲剂的方法。 缓冲液以两个步骤溅射，首先以低速率或相对高的压力进行溅射，第二次以高速率或相对较低的压力进行溅射。 所得到的电池具有良好的效率，并且根据一个实施例的特征在于吸收体和缓冲层之间的窄界面。 根据第二实施方案，缓冲剂通过相对高的氧含量被进一步表征。

公开(公告)号：US09735301B2

公开(公告)日：2017-08-15

申请号：US14081641

申请日：2013-11-15

Applicant: DOW GLOBAL TECHNOLOGIES LLC

Inventor： Todd R. Bryden ,  Buford I. Lemon ,  Joseph George ,  Rebekah Kristine Ligman Feist

IPC: H01L31/00 ,  H01L31/0749 ,  H01L31/0392 ,  C23C14/06 ,  H01L21/02 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/18

CPC classification number: H01L31/0749 ,  C23C14/0623 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02576 ,  H01L31/0296 ,  H01L31/02963 ,  H01L31/0322 ,  H01L31/0323 ,  H01L31/03925 ,  H01L31/03928 ,  H01L31/18 ,  H01L31/1828 ,  Y02E10/50 ,  Y02E10/541 ,  Y02E10/543

Abstract: A layer of an n-type chalcogenide compositions provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen.

公开(公告)号：US20140283907A1

公开(公告)日：2014-09-25

申请号：US14353918

申请日：2012-10-22

Applicant: Dow Global Technologies LLC

Inventor： Melissa A. Mushrush ,  Todd R. Bryden ,  Kevin P. Capaldo ,  Scott A. Sprague

IPC: H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/1828 ,  H01L31/022441 ,  H01L31/022475 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541

Abstract: The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered in two steps the first being at low rates or relatively high pressures and the second at high rates or relatively low pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.

Abstract translation: 本发明是一种在制造光伏电池的同时在铜硫属元素化物系吸收体上形成硫化镉基缓冲剂的方法。 缓冲液以两个步骤溅射，首先以低速率或相对高的压力进行溅射，第二次以高速率或相对较低的压力进行溅射。 所得到的电池具有良好的效率，并且根据一个实施例的特征在于吸收体和缓冲层之间的窄界面。 根据第二实施方案，缓冲剂通过相对高的氧含量被进一步表征。

公开(公告)号：US20140070354A1

公开(公告)日：2014-03-13

申请号：US14081641

申请日：2013-11-15

Applicant: DOW GLOBAL TECHNOLOGIES LLC

Inventor： Todd R. Bryden ,  Buford I. Lemon ,  Joseph George ,  Rebekah Kristine Ligman Feist

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/0749 ,  C23C14/0623 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02576 ,  H01L31/0296 ,  H01L31/02963 ,  H01L31/0322 ,  H01L31/0323 ,  H01L31/03925 ,  H01L31/03928 ,  H01L31/18 ,  H01L31/1828 ,  Y02E10/50 ,  Y02E10/541 ,  Y02E10/543

Abstract: A layer of an n-type chalcogenide compositions provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen.

Abstract translation: 一层n型硫族化物组合物，其在氧化气体存在下在足够的量的氧化气体存在下提供，该层足以提供对该层的电阻率小于在相同条件下沉积的层的电阻率，但在实质上不存在氧 。