发明授权
US09120117B2 Polylactide/silicon-containing block copolymers for nanolithography
有权
用于纳米光刻的聚丙交酯/含硅嵌段共聚物
- 专利标题： Polylactide/silicon-containing block copolymers for nanolithography
- 专利标题（中）： 用于纳米光刻的聚丙交酯/含硅嵌段共聚物
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申请号： US13761763申请日： 2013-02-07
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公开(公告)号： US09120117B2公开(公告)日： 2015-09-01
- 发明人: Christopher John Ellison , Carlton Grant Willson , Julia Cushen , Christopher M. Bates
- 申请人： Christopher John Ellison , Carlton Grant Willson , Julia Cushen , Christopher M. Bates
- 申请人地址： US TX Austin
- 专利权人： Board of Regents, The University of Texas System
- 当前专利权人： Board of Regents, The University of Texas System
- 当前专利权人地址： US TX Austin
- 代理机构： Medlen & Carroll, LLP
- 主分类号： B05D1/00
- IPC分类号： B05D1/00 ; B05D3/00 ; B05D5/00 ; B05C21/00 ; C08G63/695 ; C08F112/14 ; G03F7/00 ; B82Y10/00 ; B82Y40/00
摘要：
A diblock copolymer system that self-assembles at very low molecular weights to form very small features is described. One polymer in the block copolymer contains silicon, and the other polymer is a polylactide. The block copolymer may be synthesized by a combination of anionic and ring opening polymerization reactions. This block copolymer may form nanoporous materials that can be used as etch masks in lithographic patterning.
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