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US09123415B2 Methods of operating a phase change memory cell 有权
操作相变存储单元的方法

Methods of operating a phase change memory cell
Abstract:
A PCRAM cell has a gradated or layered resistivity bottom electrode with higher resistivity closer to a phase change material, to provide partial heating near the interface between the cell and the bottom electrode, preventing separation of the amorphous GST region from the bottom electrode, and reducing the programming current requirements. The bottom electrode can also be tapered to have a smaller cross-sectional area at the top of the bottom electrode than at the bottom of the bottom electrode.
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