Invention Grant
- Patent Title: Methods of operating a phase change memory cell
- Patent Title (中): 操作相变存储单元的方法
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Application No.: US14191586Application Date: 2014-02-27
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Publication No.: US09123415B2Publication Date: 2015-09-01
- Inventor: Jun Liu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L47/00
- IPC: H01L47/00 ; G11C13/00 ; H01L27/24 ; H01L45/00

Abstract:
A PCRAM cell has a gradated or layered resistivity bottom electrode with higher resistivity closer to a phase change material, to provide partial heating near the interface between the cell and the bottom electrode, preventing separation of the amorphous GST region from the bottom electrode, and reducing the programming current requirements. The bottom electrode can also be tapered to have a smaller cross-sectional area at the top of the bottom electrode than at the bottom of the bottom electrode.
Public/Granted literature
- US20140177329A1 BOTTOM ELECTRODE GEOMETRY FOR PHASE CHANGE MEMORY Public/Granted day:2014-06-26
Information query
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