Invention Grant
- Patent Title: Thin-film transistor circuit substrate and method of manufacturing the same
- Patent Title (中): 薄膜晶体管电路基板及其制造方法
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Application No.: US14206858Application Date: 2014-03-12
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Publication No.: US09123588B2Publication Date: 2015-09-01
- Inventor: Tetsuya Shibata , Hajime Watakabe , Atsushi Sasaki , Yuki Matsuura , Muneharu Akiyoshi , Hiroyuki Watanabe
- Applicant: JAPAN DISPLAY INC.
- Applicant Address: JP Minato-ku
- Assignee: JAPAN DISPLAY INC.
- Current Assignee: JAPAN DISPLAY INC.
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-025072 20110208
- Main IPC: H01L29/72
- IPC: H01L29/72 ; H01L27/12 ; H01L29/786 ; H01L29/66

Abstract:
According to one embodiment, a method of manufacturing a thin-film transistor circuit substrate including forming an oxide semiconductor thin film above an insulative substrate, forming a gate insulation film and a gate electrode which are stacked on a first region of the oxide semiconductor thin film, and exposing from the gate insulation film a second region and a third region of the oxide semiconductor thin film, the second region and the third region being located on both sides of the first region of the oxide semiconductor thin film, forming an interlayer insulation film of silicon nitride including dangling bonds of silicon, the interlayer insulation film covering the second region and the third region of the oxide semiconductor thin film, the gate insulation film and the gate electrode, and forming a source electrode and a drain electrode.
Public/Granted literature
- US20140191231A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-07-10
Information query
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