Invention Grant
US09123595B2 Method for fabricating a semiconductor device by bonding a layer to a support with curvature
有权
通过将层粘合到具有曲率的支撑体来制造半导体器件的方法
- Patent Title: Method for fabricating a semiconductor device by bonding a layer to a support with curvature
- Patent Title (中): 通过将层粘合到具有曲率的支撑体来制造半导体器件的方法
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Application No.: US14103994Application Date: 2013-12-12
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Publication No.: US09123595B2Publication Date: 2015-09-01
- Inventor: Shunpei Yamazaki , Masakazu Murakami , Toru Takayama , Junya Maruyama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2001-402016 20011228
- Main IPC: H01L21/58
- IPC: H01L21/58 ; H01L33/20 ; H01L21/67 ; H01L51/00 ; H01L27/12 ; H01L21/762 ; H01L29/786 ; H01L29/66 ; H01L21/20 ; H01L21/683 ; H01L27/15 ; G02F1/1333 ; H01L51/56 ; H01L27/32
Abstract:
The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
Public/Granted literature
- US20140099742A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE Public/Granted day:2014-04-10
Information query
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