Invention Grant
- Patent Title: Method of fabricating semiconductor devices
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14326960Application Date: 2014-07-09
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Publication No.: US09123657B2Publication Date: 2015-09-01
- Inventor: Minjoon Park , Junho Yoon , Je-Woo Han , Chan-Won Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2013-0111393 20130916
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/308 ; H01L49/02

Abstract:
A method of fabricating a semiconductor device is provided. The method may include forming an interlayer insulating layer on a structure with a cell region and a peripheral circuit region, forming a first mask layer on the interlayer insulating layer, forming trenches in the first mask layer exposing the interlayer insulating layer by patterning the first mask layer on the peripheral circuit region, and forming key mask patterns in the trenches. An etch selectivity of the first mask patterns with respect to the interlayer insulating layer may be greater than that of the key mask patterns with respect to the interlayer insulating layer.
Public/Granted literature
- US20150079791A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICES Public/Granted day:2015-03-19
Information query
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