Transistors including a channel where first and second regions have less oxygen concentration than a remaining region of the channel, methods of manufacturing the transistors, and electronic devices including the transistors

Invention Grant

US09123750B2 Transistors including a channel where first and second regions have less oxygen concentration than a remaining region of the channel, methods of manufacturing the transistors, and electronic devices including the transistors 有权

Title translation: 包括其中第一和第二区域具有比通道的剩余区域更少的氧浓度的通道的晶体管，制造晶体管的方法以及包括晶体管的电子器件

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Patent Title: Transistors including a channel where first and second regions have less oxygen concentration than a remaining region of the channel, methods of manufacturing the transistors, and electronic devices including the transistors
Patent Title (中): 包括其中第一和第二区域具有比通道的剩余区域更少的氧浓度的通道的晶体管，制造晶体管的方法以及包括晶体管的电子器件
Application No.: US14016599

Application Date: 2013-09-03
Publication No.: US09123750B2

Publication Date: 2015-09-01
Inventor: Joon-seok Park , Sun-jae Kim , Tae-sang Kim , Hyun-suk Kim , Myung-kwan Ryu , Seok-jun Seo , Jong-baek Seon , Kyoung-seok Son , Sang-yoon Lee
Applicant: Samsung Electronics Co., Ltd.
Applicant Address: KR Gyeonggi-do KR Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.,Samsung Display Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.,Samsung Display Co., Ltd.
Current Assignee Address: KR Gyeonggi-do KR Gyeonggi-do
Agency: Harness, Dickey & Pierce, P.L.C.
Priority: KR10-2012-0143031 20121210
Main IPC: H01L29/10
IPC: H01L29/10 ; H01L29/66 ; H01L29/786

Transistors including a channel where first and second regions have less oxygen concentration than a remaining region of the channel, methods of manufacturing the transistors, and electronic devices including the transistors

Abstract:

According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.

Abstract(Chinese):

根据示例性实施例，晶体管可以包括彼此堆叠的栅电极，栅极绝缘层和沟道层; 以及分别与沟道层的第一和第二区域接触的源电极和漏电极。沟道层可以包括金属氮氧化物。可以用含氢的等离子体处理沟道层的第一和第二区域，并且第一和第二区域具有比沟道层的剩余区域的载流子浓度更高的载流子浓度。沟道层的第一和第二区域可以具有比其余区域更低的氧浓度和更高的氮浓度。沟道层的金属氧氮化物可以包括基于氮氧化锌（ZnON）的半导体。

Public/Granted literature

US20140159035A1 TRANSISTORS, METHODS OF MANUFACTURING TRANSISTORS, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS Public/Granted day:2014-06-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/06	..按其形状区分的；按各半导体区域的形状、相对尺寸或配置区分的
H01L29/10	...具有连接到1个不通有待整流、放大或切换的电流的电极上去的半导体区域的；并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的