Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14282946Application Date: 2014-05-20
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Publication No.: US09123806B2Publication Date: 2015-09-01
- Inventor: Edward Fuergut , Joachim Mahler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/31 ; H01L29/06 ; H01L29/66 ; H01L21/56 ; H01L23/00
Abstract:
The method includes providing a semiconductor chip having a first main face and a second main face opposite the first main face. The semiconductor chip includes an electrical device adjacent to the first main face. Material of the semiconductor chip is removed at the second main face except for a pre-defined portion so that a non-planar surface remains at the second main face.
Public/Granted literature
- US20140327071A1 Method of Manufacturing a Semiconductor Device Public/Granted day:2014-11-06
Information query
IPC分类:
