Invention Grant
- Patent Title: Magnetoresistive device and a writing method for a magnetoresistive device
- Patent Title (中): 磁阻器件和磁阻器件的写入方法
-
Application No.: US13623741Application Date: 2012-09-20
-
Publication No.: US09123884B2Publication Date: 2015-09-01
- Inventor: Yuanhong Luo , Rachid Sbiaa , Yan Hwee Sunny Lua
- Applicant: Agency for Science, Technology and Research
- Applicant Address: SG Singapore
- Assignee: Agency for Science, Technology and Research
- Current Assignee: Agency for Science, Technology and Research
- Current Assignee Address: SG Singapore
- Agency: Crockett & Crockett, PC
- Agent K. David Crockett, Esq.; Niky Economy Syrengelas, Esq.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L43/08
Abstract:
According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes at least two ferromagnetic soft layers, wherein the at least two ferromagnetic soft layers have different ranges of magnetization switching frequencies. Further embodiments provide a magnetoresistive device including at least two oscillating ferromagnetic structures, wherein ranges of operating current amplitudes at which oscillations are induced for the at least two oscillating ferromagnetic structures are different. According to further embodiments of the present invention, writing methods for the magnetoresistive devices are provided.
Public/Granted literature
- US20130077391A1 Magnetoresistive Device and a Writing Method for a Magnetoresistive Device Public/Granted day:2013-03-28
Information query
