Invention Grant
US09123891B2 Diode for variable-resistance material memories, processes of forming same, and methods of using same
有权
用于可变电阻材料存储器的二极管，其形成方法及其使用方法
- Patent Title: Diode for variable-resistance material memories, processes of forming same, and methods of using same
- Patent Title (中): 用于可变电阻材料存储器的二极管，其形成方法及其使用方法
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Application No.: US14530935Application Date: 2014-11-03
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Publication No.: US09123891B2Publication Date: 2015-09-01
- Inventor: Jun Liu , Michael P. Violette
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00 ; H01L27/24
Abstract:
A variable-resistance material memory (VRMM) device includes a container conductor disposed over an epitaxial semiconductive prominence that is coupled to a VRMM. A VRMM device may also include a conductive plug in a recess that is coupled to a VRMM. A VRMM array may also include a conductive plug in a surrounding recess that is coupled to a VRMM. Apparatuses include the VRMM with one of the diode constructions.
Public/Granted literature
- US20150050795A1 DIODE FOR VARIABLE-RESISTANCE MATERIAL MEMORIES, PROCESSES OF FORMING SAME, AND METHODS OF USING SAME Public/Granted day:2015-02-19
Information query
IPC分类:
