Invention Grant
- Patent Title: Method of compensating for effects of mechanical stresses in a microcircuit
- Patent Title (中): 补偿微电路机械应力影响的方法
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Application No.: US13953571Application Date: 2013-07-29
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Publication No.: US09127994B2Publication Date: 2015-09-08
- Inventor: Pascal Fornara , Christian Rivero
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Seed IP Law Group PLLC
- Priority: FR1257356 20120730
- Main IPC: G01L1/00
- IPC: G01L1/00 ; H01L29/66 ; G01L1/14 ; G01L11/00 ; G01L1/22 ; H01L27/06 ; G01L25/00

Abstract:
A method for manufacturing an integrated circuit includes forming in a substrate a measuring circuit sensitive to mechanical stresses and configured to supply a measurement signal representative of mechanical stresses exerted on the measuring circuit. The measuring circuit is positioned such that the measurement signal is also representative of mechanical stresses exerted on a functional circuit of the integrated circuit. A method of using the integrated circuit includes determining from the measurement signal the value of a parameter of the functional circuit predicted to mitigate an impact of the variation in mechanical stresses on the operation of the functional circuit, and supplying the functional circuit with the determined value of the parameter.
Public/Granted literature
- US20140026670A1 METHOD OF COMPENSATING FOR EFFECTS OF MECHANICAL STRESSES IN A MICROCIRCUIT Public/Granted day:2014-01-30
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