Invention Grant
US09128824B2 In-place change between transient and persistent state for data structures on non-volatile memory
有权
在非易失性存储器上的数据结构的瞬态和持久状态之间就地更改
- Patent Title: In-place change between transient and persistent state for data structures on non-volatile memory
- Patent Title (中): 在非易失性存储器上的数据结构的瞬态和持久状态之间就地更改
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Application No.: US13726303Application Date: 2012-12-24
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Publication No.: US09128824B2Publication Date: 2015-09-08
- Inventor: Matthias Gries , Marcelo Cintra , Thomas Lehnig , Sebastian Steibl , Tor Lund-Larsen
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Alpine Technology Law Group LLC
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02 ; G06F9/50
Abstract:
Methods and apparatus related to in-place change between transient and persistent state for data structures on non-volatile memory are described. In one embodiment, controller logic causes a change in a state of a first portion of one or more non-volatile memory devices between a persistent state and a transient state and without moving data stored in the first portion of the one or more non-volatile memory devices. Other embodiments are also disclosed and claimed.
Public/Granted literature
- US20140181367A1 IN-PLACE CHANGE BETWEEN TRANSIENT AND PERSISTENT STATE FOR DATA STRUCTURES ON NON-VOLATILE MEMORY Public/Granted day:2014-06-26
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