Invention Grant
- Patent Title: CPP-type magnetoresistance effect element and magnetic disk device
- Patent Title (中): CPP型磁阻效应元件和磁盘装置
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Application No.: US13842948Application Date: 2013-03-15
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Publication No.: US09129622B2Publication Date: 2015-09-08
- Inventor: Takahiko Machita , Naomichi Degawa , Takekazu Yamane , Takumi Yanagisawa , Satoshi Miura , Kenta Hamamoto , Minoru Ota , Kenzo Makino , Shohei Kawasaki
- Applicant: TDK Corporation
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Main IPC: G11B5/39
- IPC: G11B5/39 ; H01L43/08 ; G01R33/09

Abstract:
A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction. The magnetoresistive effect part includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer that sandwich the nonmagnetic intermediate layer from above and below, the upper shield layer and the lower shield layer have inclined magnetization structures in which magnetizations of them are respectively inclined with respect to a track width direction, the magnetizations of the upper shield layer and the lower shield layer are mutually substantially orthogonal, the first ferromagnetic layer is indirectly magnetically coupled with the upper shield layer via a first exchange coupling function gap layer that is positioned between the first ferromagnetic layer and the upper shield layer, and the second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via a second exchange coupling function gap layer that is positioned between the second ferromagnetic layer and the lower shield layer.
Public/Granted literature
- US20140268405A1 CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC DISK DEVICE Public/Granted day:2014-09-18
Information query
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