Invention Grant
- Patent Title: Word-line driver for memory
- Patent Title (中): 用于内存的字线驱动程序
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Application No.: US14266468Application Date: 2014-04-30
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Publication No.: US09129685B2Publication Date: 2015-09-08
- Inventor: Vikas Rana
- Applicant: STMicroelectronics International N.V.
- Applicant Address: NL Amsterdam
- Assignee: STMICROELECTRONICS INTERNATIONAL N.V.
- Current Assignee: STMICROELECTRONICS INTERNATIONAL N.V.
- Current Assignee Address: NL Amsterdam
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: IN1282/DEL/2010 20100602
- Main IPC: G11C11/4193
- IPC: G11C11/4193 ; G11C11/4195 ; G11C16/14 ; G11C8/08 ; G11C16/06 ; G11C16/26

Abstract:
A word-line driver includes first, second and third transistors. The first transistor includes a gate terminal driven by a first group selection signal, a first conduction terminal driven by a second sub-group selection signal and a second conduction terminal coupled to the word-line. The second transistor includes a gate terminal driven by a second group selection signal, a second conduction terminal driven by the second sub-group selection signal, and a first conduction terminal coupled to the word-line. The third transistor includes a gate terminal driven by a third the group selection signal, a first conduction terminal driven by a first sub-group selection signal, and a second conduction terminal coupled to the word-line.
Public/Granted literature
- US20140233321A1 WORD-LINE DRIVER FOR MEMORY Public/Granted day:2014-08-21
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