Invention Grant
US09129685B2 Word-line driver for memory 有权
用于内存的字线驱动程序

Word-line driver for memory
Abstract:
A word-line driver includes first, second and third transistors. The first transistor includes a gate terminal driven by a first group selection signal, a first conduction terminal driven by a second sub-group selection signal and a second conduction terminal coupled to the word-line. The second transistor includes a gate terminal driven by a second group selection signal, a second conduction terminal driven by the second sub-group selection signal, and a first conduction terminal coupled to the word-line. The third transistor includes a gate terminal driven by a third the group selection signal, a first conduction terminal driven by a first sub-group selection signal, and a second conduction terminal coupled to the word-line.
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