Invention Grant
- Patent Title: Programmable memory repair scheme
- Patent Title (中): 可编程内存修复方案
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Application No.: US14150659Application Date: 2014-01-08
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Publication No.: US09129712B2Publication Date: 2015-09-08
- Inventor: Adrian E. Ong , Fan Ho
- Applicant: RAMBUS INC.
- Applicant Address: US CA Sunnyvale
- Assignee: RAMBUS INC.
- Current Assignee: RAMBUS INC.
- Current Assignee Address: US CA Sunnyvale
- Agency: Lowenstein Sandler LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/48 ; G11C29/44

Abstract:
A controller including a non-volatile memory to store a repair address, and a memory control unit operatively coupled with the non-volatile memory. The memory control unit comprising a memory test function configured to detect a malfunctioning address of primary data storage elements within a memory device. The memory device being another semiconductor device separate from the controller. The memory test function configured to store the repair address in the non-volatile memory, the repair address indicating the malfunctioning address of the primary data storage element.
Public/Granted literature
- US20140247678A1 PROGRAMMABLE MEMORY REPAIR SCHEME Public/Granted day:2014-09-04
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