Invention Grant
- Patent Title: Memory device and manufacturing method the same
- Patent Title (中): 存储器件和制造方法相同
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Application No.: US14454113Application Date: 2014-08-07
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Publication No.: US09129866B2Publication Date: 2015-09-08
- Inventor: Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-091318 20050328
- Main IPC: G11C11/34
- IPC: G11C11/34 ; H01L27/12 ; B82Y10/00 ; G11C13/00 ; H01L27/28 ; H01L23/482 ; H01L29/786 ; H01L27/105 ; H01L29/45

Abstract:
A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
Public/Granted literature
- US20140346505A1 MEMORY DEVICE AND MANUFACTURING METHOD THE SAME Public/Granted day:2014-11-27
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