Invention Grant
- Patent Title: Nitride-based semiconductor device and manufacturing method thereof
- Patent Title (中): 氮化物半导体器件及其制造方法
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Application No.: US13947517Application Date: 2013-07-22
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Publication No.: US09129888B2Publication Date: 2015-09-08
- Inventor: Jae Hoon Lee , Young Sun Kwak
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2012-0079798 20120723
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/02 ; H01L29/66 ; H01L29/778 ; H01L29/207 ; H01L29/36 ; H01L29/423 ; H01L23/29
Abstract:
A nitride-based semiconductor device includes a buffer layer on a substrate, a nitride-based semiconductor layer on the buffer layer, at least one ion implanted layer within the nitride-based semiconductor layer, and a channel layer on the nitride-based semiconductor layer.
Public/Granted literature
- US20140021481A1 NITRIDE-BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-01-23
Information query
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